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Same model may have multiple batches, images only for reference.
DMN2009USS-13Diodes Incorporated
Same model may have multiple batches, images only for reference.

DMN2009USS-13

Part No DMN2009USS-13
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET N-CH 20V 8SOIC
Datasheet
DMN2009USS-13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products> Transistors FETs, MOSFETs Single FETs, MOSFETs
Part Status Active
FET Type N-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1706 pF @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Win Source Part Number WS1310391-DMN2009USS-13
Ultra Librarian 3D Model Ultra Librarian DMN2009USS-13 CAD Model

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

ā— Backlighting<br />ā—  Power Management Functions ā—  DC-DC Converters

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