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Same model may have multiple batches, images only for reference.
SQM120P10-10M1LGE3 Vishay – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

SQM120P10-10M1LGE3

Part No SQM120P10-10M1LGE3
Manufacturer Vishay
Catalog TRANSISTORS
Description MOSFETs P Ch -100Vds 20Vgs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay
Technology Si
Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 8.1 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 190 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W
Channel Mode Enhancement
Qualification AEC-Q101
Tradename TrenchFET
Series SQM
Packaging Tube
Configuration Single
Height 4.83 mm
Length 10.67 mm
Transistor Type 1 P-Channel
Width 9.65 mm
Brand Vishay Semiconductors
Forward Transconductance - Min 60 S
Fall Time 200 ns
Product Type MOSFETs
Rise Time 100 ns
Standard Pack Qty 800
Subcategory Transistors
Typical Turn-Off Delay Time 120 ns
Typical Turn-On Delay Time 20 ns
Ultra Librarian 3D Model Ultra Librarian SQM120P10-10M1LGE3 CAD Model

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