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PMBFJ110,215

Part No PMBFJ110,215
Manufacturer NXP / Nexperia
Catalog TRANSISTORS
Description JFETs JFET N-CH 25V 6MA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer NXP
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23
Transistor Polarity N-Channel
Configuration Single
Vds - Drain-Source Breakdown Voltage 25 V
Vgs - Gate-Source Breakdown Voltage - 25 V
Gate-Source Cutoff Voltage - 4 V
Id - Continuous Drain Current 10 mA
Rds On - Drain-Source Resistance 18 Ohms
Pd - Power Dissipation 250 mW
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Series PMBFJ110
Packaging Reel
Type JFET
Brand NXP Semiconductors
Maximum Drain Gate Voltage - 25 V
Product Type JFETs
Standard Pack Qty 3000
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian PMBFJ110,215 CAD Model

Description

The NXP PMBFJ110,215 is a high-performance Junction Field Effect Transistor (JFET) designed to offer fast switching with low on-resistance and low leakage current. This particular JFET is widely used in applications that require high-speed switching and amplification, such as analog switches, choppers, commutators, and amplifiers in a variety of electronic devices.

Key Features

  • High-Speed Switching: The PMBFJ110,215 is optimized for quick transitions, making it suitable for high-frequency applications.
  • Low On-Resistance: This JFET features a low on-state resistance, which minimizes power loss and improves efficiency in electronic circuits.
  • Low Leakage Current: It exhibits a very low leakage current, ensuring minimal power waste and a stable performance over time.
  • High Input Impedance: The high input impedance makes it an excellent choice for sensitive amplification applications, providing minimal loading on the signal source.

Applications

The versatility of the NXP PMBFJ110,215 allows it to be used in a wide range of applications. Some common uses include:

  • Analog Switches
  • Choppers
  • Commutators
  • Low-Noise Amplifiers
  • Audio Amplifiers
  • Signal Processing

Product Specifications

Parameter Value
Drain-Source Voltage (Vds) 25V
Gate-Source Voltage (Vgs) -25V
Drain Current (Id) 10mA
Power Dissipation (Pd) 300mW
Operating Temperature Range -55°C to +150°C

With its robust design and reliable performance, the NXP PMBFJ110,215 JFET is a solid choice for professionals seeking a component that delivers precision and durability. Whether for industrial, commercial, or consumer electronics, this JFET stands out for its high-quality and flexibility in a multitude of electronic circuit applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.2613 $67.5678
13+ $9.2400 $120.1200
20+ $8.9513 $179.0260
27+ $8.6625 $233.8875
35+ $8.3738 $293.0830
47+ $7.5075 $352.8525
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,840 pieces
MOQ: 6 pcs
Order Increment : 3000 pcs
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