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2SC4793(F,M)

Part No 2SC4793(F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog TRANSISTORS
Description Bipolar Transistors - BJT NPN 230V 1A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Mounting Style Through Hole
Package / Case TO-220FP-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 230 V
Collector- Base Voltage VCBO 230 V
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 1 A
Pd - Power Dissipation 2 W
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series 2SC4793
Packaging Tube
DC Current Gain hFE Max 320
Height 8.1 mm
Length 10 mm
Technology Si
Width 4.5 mm
Brand Toshiba
Continuous Collector Current 1 A
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 500
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian 2SC4793(F,M) CAD Model

Description

Overview

The 2SC4793(F,M) is a high-frequency, high-power NPN transistor, prominently used in audio and radio frequency applications. Its advanced design supports seamless integration into both commercial and personal electronics, making it a popular choice among electrical engineers.

Applications

  • RF transmitters
  • Audio power amplifiers
  • Broadcast radios
  • Signal processing devices
  • Instrumentation amplifiers

Key Features and Benefits

  • Advanced Frequency Capabilities: Suitable for high-frequency operations, ensuring clean signal transmission.
  • Enhanced Power Handling: Manages high voltage loads efficiently, making it suitable for demanding applications.
  • Stable Performance: Maintains operational consistency over extended periods.
  • Flexible Configurations: Available in multiple configurations to fit a variety of circuit requirements.

The 2SC4793(F,M) supports applications where precision and performance are crucial. Its adaptability and reliable construction make it beneficial for projects that demand both power and efficiency in audiophile and RF technology fields.

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