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Same model may have multiple batches, images only for reference.
IPW65R070C6FKSA1
Same model may have multiple batches, images only for reference.

IPW65R070C6FKSA1

Part No IPW65R070C6FKSA1
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs HIGH POWER_LEGACY
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style Through Hole
Package / Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 53.5 A
Rds On - Drain-Source Resistance 63 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 170 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 391 W
Channel Mode Enhancement
Tradename CoolMOS
Series CoolMOS C6
Packaging Tube
Configuration Single
Height 21.1 mm
Length 16.13 mm
Transistor Type 1 N-Channel
Width 5.21 mm
Brand Infineon Technologies
Fall Time 6 ns
Product Type MOSFETs
Rise Time 17 ns
Subcategory Transistors
Typical Turn-Off Delay Time 90 ns
Typical Turn-On Delay Time 17 ns
Ultra Librarian 3D Model Ultra Librarian IPW65R070C6FKSA1 CAD Model

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