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2SA1930(Q,M) Toshiba Semiconductor and Storage 2SA1930(Q,M) real image 2SA1930(Q,M) label picture
Same model may have multiple batches, images only for reference.
2SA1930(Q,M) Toshiba Semiconductor and Storage 2SA1930(Q,M) real image 2SA1930(Q,M) label picture
2SA1930(Q,M) Toshiba Semiconductor and Storage 2SA1930(Q,M) real image 2SA1930(Q,M) label picture
Same model may have multiple batches, images only for reference.

2SA1930(Q,M)

Part No 2SA1930(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog TRANSISTORS
Description Bipolar Transistors - BJT PNP 180V 2A Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Mounting Style Through Hole
Package / Case TO-220FP-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 180 V
Collector- Base Voltage VCBO 180 V
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 2 A
Pd - Power Dissipation 25 W
Gain Bandwidth Product fT 200 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series 2SA1930
Height 8.1 mm
Length 10 mm
Technology Si
Width 4.5 mm
Brand Toshiba
Continuous Collector Current - 2 A
DC Collector/Base Gain hfe Min 50
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 500
Subcategory Transistors
Ultra Librarian 3D Model Ultra Librarian 2SA1930(Q,M) CAD Model

Description

It has a limited supply and demand status. This product is manufactured by Toshiba and is available on the Win Source Part Number 809940-2SA1930(Q,M).

  • Type: PNP Transistor
  • Supplier Device Package: TO-220NIS
  • Manufacturer Package: TO-220-3 Full Pack
  • Maximum Power: 2W
  • Frequency Transition: 200MHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7083 $51.4577
45+ $2.2223 $100.0035
70+ $2.1528 $150.6960
97+ $2.0833 $202.0801
125+ $2.0139 $251.7375
167+ $1.8056 $301.5352
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Availability: 15,000 pieces
MOQ: 19 pcs
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