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SSM3J338R,LF Real Image SSM3J338R,LF real image11195 SSM3J338R,LF Real Image
Same model may have multiple batches, images only for reference.
SSM3J338R,LF Real Image SSM3J338R,LF real image11195 SSM3J338R,LF Real Image
SSM3J338R,LF Real Image SSM3J338R,LF real image11195 SSM3J338R,LF Real Image
Same model may have multiple batches, images only for reference.

SSM3J338R,LF

Part No SSM3J338R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog TRANSISTORS
Description MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A
Datasheet
SSM3J338R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23F-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 45.3 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 19.5 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W
Channel Mode Enhancement
Tradename U-MOSVII
Series SSM3J338
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Single
Height 0.9 mm
Length 2.9 mm
Transistor Type 1 P-Channel
Width 1.8 mm
Brand Toshiba
Forward Transconductance - Min 17 S
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Typical Turn-Off Delay Time 383 ns
Typical Turn-On Delay Time 65 ns
Ultra Librarian 3D Model Ultra Librarian SSM3J338R,LF CAD Model

Description

The SSM3J338R,LF is a P-channel MOSFET from Toshiba Semiconductor and Storage.

  • Package: SOT-23F
  • Supply and Demand Status: Balanced
  • Suitable for: Power management, battery protection, and load switching
  • Popularity: Medium
  • Designed for: Use in low voltage applications

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420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
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