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Same model may have multiple batches, images only for reference.
IPB025N10N3 G
Same model may have multiple batches, images only for reference.

IPB025N10N3 G

Part No IPB025N10N3 G
Manufacturer Infineon Technologies
Catalog TRANSISTORS
Description MOSFETs N-Ch 100V 180A D2PAK-6 OptiMOS 3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-7
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 180 A
Rds On - Drain-Source Resistance 2 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 206 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename OptiMOS
Series OptiMOS 3
Packaging Cut Tape
Packaging MouseReel
Packaging Reel
Configuration Single
Height 4.4 mm
Length 10 mm
Transistor Type 1 N-Channel
Type OptiMOS 3 Power-Transistor
Width 9.25 mm
Brand Infineon Technologies
Forward Transconductance - Min 100 S
Fall Time 28 ns
Product Type MOSFETs
Rise Time 58 ns
Standard Pack Qty 1000
Subcategory Transistors
Typical Turn-Off Delay Time 84 ns
Typical Turn-On Delay Time 34 ns
Ultra Librarian 3D Model Ultra Librarian IPB025N10N3 G CAD Model

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14+ $7.4818 $104.7452
21+ $7.2480 $152.2080
29+ $7.0142 $203.4118
37+ $6.7804 $250.8748
50+ $6.0790 $303.9500
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