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FQI2N80TU

Part No FQI2N80TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.4A I2PAK / Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) I2PAK Rail
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 550pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 85W (Tc)
Rds On (Maximum) @ Id, Vgs 6.3 Ohm @ 900mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774739-FQI2N80TU
Popularity Medium
Supply and Demand Status Limited
Family Name FQI2N80
Introduction Date November 02, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQI2N80TU CAD Model

Description

The FQI2N80TU is a MOSFET transistor that belongs to the QFET series from Fairchild/ON Semiconductor.

  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting Style: Through hole
  • Current Continuous Drain: 2.4A (Tc)
  • Maximum Power Dissipation: 3.13W (Ta), 85W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain Source Voltage: 800V
  • Gate Charge (Qg) (maximum) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 550pF @ 25V
  • Status: Obsolete(EOL)
  • Alternative Parts: BUZ78 E3046, FQU2N80TU-NL, FQU2N80, FQU2N80TU

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