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Same model may have multiple batches, images only for reference.
2N6770T1 Microsemi Corporation – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

2N6770T1

Part No 2N6770T1
Manufacturer Microsemi Corporation
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 500V 12A TO254AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-254AA
Package / Case TO-254-3, TO-254AA (Straight Leads)
Ultra Librarian 3D Model Ultra Librarian 2N6770T1 CAD Model

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