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Same model may have multiple batches, images only for reference.
IPA65R150CFD Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA65R150CFD

Part No IPA65R150CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22.4A TO220
Datasheet
IPA65R150CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2340pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34.7W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205216-IPA65R150CFD
Family Name IPA65R150CFD
Introduction Date November 16, 2011
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA65R150CFD CAD Model

Description

The Infineon Technologies IPA65R150CFD is a MOSFET transistor that is used in electronic devices that require efficient power switching. With high popularity and balance supply and demand status, this transistor is a reliable choice for designers looking for a stable and long-lasting power solution.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 22.4A @ 25°C

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