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IPB023N06N3G

Part No IPB023N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS™3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186010-IPB023N06N3G
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB023N06N3G CAD Model

Description

The IPB023N06N3G is a CoolMOS™ Power MOSFET from Infineon Technologies, part of their OptiMOS™ series. This N-channel MOSFET is engineered for optimized performance in synchronous rectification, DC-DC conversion, and other high-efficiency power applications. It boasts a very low on-resistance and fast switching characteristics, contributing to reduced power losses and improved system efficiency.

Applications

  • Synchronous Rectification in AC-DC and DC-DC Power Supplies
  • DC-DC Converters
  • Motor Control Applications
  • Battery Management Systems
  • High-Frequency Switching Applications

Features

  • 60V Drain-Source Voltage (VDS)
  • Ultra-Low On-Resistance (RDS(on)) of 2.3 mΩ (typical)
  • Optimized for Synchronous Rectification
  • Low Gate Charge (Qg)
  • Avalanche Rated
  • Pb-free lead plating; RoHS compliant

Benefits

  • High Efficiency: The extremely low on-resistance minimizes conduction losses, enhancing overall efficiency in power conversion applications.
  • Reduced Power Dissipation: Lower RDS(on) contributes to less heat generation, simplifying thermal design and improving reliability.
  • Fast Switching Speed: Low gate charge facilitates faster switching speeds, reducing switching losses and enabling higher frequency operation.
  • Robustness: Avalanche rating ensures reliable performance under demanding transient conditions.
  • Simplified Design: Optimized for synchronous rectification, simplifying circuit design in these types of applications.

Additional Details

The IPB023N06N3G leverages Infineon's advanced OptiMOS™ technology, resulting in superior performance compared to conventional MOSFETs. This includes lower on-resistance, reduced gate charge, and improved switching behavior. This MOSFET is typically available in a TO-263 (D2PAK) package, providing excellent thermal dissipation capabilities for demanding applications.

Technical Specifications:

  • VDS (Drain-Source Voltage): 60V
  • RDS(on) (On-Resistance): 2.3 mΩ (typical)
  • ID (Drain Current): Consult datasheet for specific value depending on package and operating conditions.
  • Qg (Gate Charge): Consult datasheet for specific value.
  • Package Type: TO-263 (D2PAK)

It's crucial to consult the manufacturer's datasheet for the most accurate and up-to-date specifications and application recommendations before integrating this product into any design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8120 $59.0520
51+ $2.3074 $117.6774
78+ $2.2352 $174.3456
107+ $2.1631 $231.4517
139+ $2.0910 $290.6490
185+ $1.8747 $346.8195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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