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Same model may have multiple batches, images only for reference.
IPB039N04LGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB039N04LGATMA1

Part No IPB039N04LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263-3
Datasheet
IPB039N04LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 45μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 6100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045762-IPB039N04LGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB039N04LGATMA1 CAD Model

Description

The Infineon Technologies IPB039N04LGATMA1 is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 80A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Power Dissipation: 94W (Tc)
  • Packaging: Reel
  • Drive Voltage (max Rds On, Min Rds On): 4.5V, 10V
  • Lifecycle Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting Type: SMD (SMT)
  • Maximum Rds On (Id,Vgs): 3.9 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: Sufficient
  • Package: PG-TO263-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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