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IPB055N03LGATMA1

Part No IPB055N03LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-263-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 125424-IPB055N03LGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB055N03LGATMA1 CAD Model

Description

The Infineon Technologies IPB055N03LGATMA1 is an N-channel MOSFET in a PG-TO263-2 package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 68W (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 3200pF @ 15V
  • Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V

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