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Same model may have multiple batches, images only for reference.
IPB06CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPB06CN10N G

Part No IPB06CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO263-3
Datasheet
IPB06CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 180μA
Max Gate Charge 139nC @ 10V
Max Input Capacitance 9200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205222-IPB06CN10N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB06CN10N G CAD Model

Description

The Infineon Technologies 205222-IPB06CN10N G is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 100A @ 25°C.

  • Maximum Power Dissipation: 214W (Tc)
  • Maximum Rds On: 6.2 mOhm @ 100A, 10V
  • Gate-Source Threshold Voltage: 4V @ 180μA
  • Maximum Gate Charge: 139nC @ 10V
  • Maximum Input Capacitance: 9200pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-263-2

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