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IPB072N15N3

Part No IPB072N15N3
Manufacturer Infineon Technologies
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 15+Rohs
Reference case TO-263
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 738743-IPB072N15N3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB072N15N3 CAD Model

Description

The IPB072N15N3 is a power MOSFET from Infineon Technologies, part of their OptiMOS™3 family. This N-channel MOSFET is engineered for high-efficiency power conversion in a multitude of applications. It distinguishes itself with a remarkably low on-state resistance (RDS(on)) and optimized switching characteristics, minimizing both conduction and switching losses. This makes it an ideal choice for applications demanding superior power density and efficiency.

Applications

  • Synchronous rectification in switched-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control
  • Battery management systems (BMS)
  • OR-ing applications

Features

  • OptiMOS™3 Technology: Provides ultra-low on-state resistance (RDS(on)) and optimized switching behavior.
  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • Avalanche Rated: Robust against transient voltage spikes.
  • 100% Avalanche Tested: Ensures consistent avalanche performance.
  • Pb-Free Lead Finish: Compliant with RoHS directives for environmental protection.

Benefits

  • High Efficiency: Ultra-low RDS(on) minimizes conduction losses, leading to high efficiency.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
  • Improved System Performance: Fast switching speeds enhance the overall performance of the application.
  • Increased Power Density: Efficient design enables higher power density in compact applications.
  • Robust and Reliable: Avalanche rating and 100% testing ensure reliable operation in demanding conditions.

Additional Details

The IPB072N15N3 typically has a drain-source voltage (VDS) rating of 150V and a continuous drain current (ID) rating that is dependent on case temperature and cooling conditions. The gate-source voltage (VGS) is usually rated at ±20V. The low gate charge (Qg) is a key factor in its fast switching speeds. It is commonly available in a TO-263 (D2PAK) package. It meets or exceeds industry standards for quality and reliability. Proper gate drive circuitry is recommended for optimal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6355 $65.4200
80+ $1.5292 $122.3360
120+ $1.4772 $177.2640
170+ $1.3710 $233.0700
220+ $1.3190 $290.1800
275+ $1.2659 $348.1225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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