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IPB09N03LAG

Part No IPB09N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068969-IPB09N03LAG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB09N03LAG CAD Model

Description

The Infineon Technologies IPB09N03LAG is a MOSFET transistor that is suitable for various applications.

  • Status: This transistor is obsolete and has reached its end of life.
  • Popularity: It has a medium popularity and is suitable for low-popularity applications that require a MOSFET transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.5814 $60.6512
19+ $6.2208 $118.1952
29+ $6.0268 $174.7772
40+ $5.8316 $233.2640
52+ $5.6376 $293.1552
69+ $5.0543 $348.7467
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,400 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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