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IPB120P04P4L03ATMA1

Part No IPB120P04P4L03ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 120A TO263-3 / Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 340μA
Gate Charge (Qg) (Maximum) @ Vgs 234nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 15000pF @ 25V
Vgs (Maximum) ±16V
Power Dissipation (Maximum) 136W (Tc)
Rds On (Maximum) @ Id, Vgs 3.1 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 776846-IPB120P04P4L03ATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPB120P04P4L-03
Introduction Date February 10, 2011
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPB120P04P4L03ATMA1 CAD Model

Description

The Infineon Technologies IPB120P04P4L03ATMA1 is a P-channel MOSFET with a current continuous drain of 120A (Tc).

  • Gate Charge: 234nC @ 10V
  • Input Capacitance: 15000pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain Source Voltage: 40V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.1544 $50.4704
39+ $2.5883 $100.9437
60+ $2.5074 $150.4440
83+ $2.4265 $201.3995
107+ $2.3456 $250.9792
143+ $2.1030 $300.7290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 920 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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