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Same model may have multiple batches, images only for reference.
IPB160N04S2L03ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB160N04S2L03ATMA1

Part No IPB160N04S2L03ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A TO263-7
Datasheet
IPB160N04S2L03ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 230nC @ 5V
Max Input Capacitance 6000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-7-3
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 137787-IPB160N04S2L03ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB160N04S2L03ATMA1 CAD Model

Description

The Infineon Technologies 137787-IPB160N04S2L03ATMA1 is a MOSFET technology-based electronic component.

  • Polarity: N-Channel
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Rds On @ Id, Vgs: 2.7 mOhm @ 80A, 10V
  • Ideal for: Use in various electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $42.2303 $84.4606
4+ $34.6500 $138.6000
6+ $33.5678 $201.4068
8+ $32.4844 $259.8752
10+ $31.4021 $314.0210
13+ $28.1531 $365.9903
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Availability: 3,500 pieces
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