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Same model may have multiple batches, images only for reference.
IPB26CN10N Real Image
Same model may have multiple batches, images only for reference.

IPB26CN10N

Part No IPB26CN10N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V
Power Dissipation (Max) 71W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603355-IPB26CN10N
Ultra Librarian 3D Model Ultra Librarian IPB26CN10N CAD Model

Description

The IPB26CN10N is a N-channel MOSFET transistor from the CoolMOS™ series.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 35A
  • On-Resistance: 26mOhm @ 35A and 10V
  • Package: TO-263-3, D²Pak
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2382 $50.0220
515+ $0.1954 $100.6310
795+ $0.1893 $150.4935
1,095+ $0.1832 $200.6040
1,415+ $0.1771 $250.5965
1,890+ $0.1588 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,370 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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