The IPB26CN10NG is an OptiMOS™ Power-Transistor from Infineon Technologies, designed for use in high-frequency switching applications. It leverages Infineon’s advanced MOSFET technology to deliver high efficiency and reliability. This N-channel enhancement mode MOSFET is optimized for synchronous rectification in Switched Mode Power Supplies (SMPS) and DC-DC converters. The device features low on-state resistance (RDS(on)) and gate charge (Qg), minimizing conduction and switching losses.

Applications:

• Synchronous Rectification in SMPS
• DC-DC Converters
• Adapter
• Server Power Supplies
• OR-ing applications

Features:

• Optimized for high-frequency switching
• Very low on-resistance RDS(on)
• Low gate charge Qg
• Avalanche rated
• Logic Level
• 100% Avalanche tested
• Robust body diode
• Pb-free plating
• Halogen-free mold compound
• Automotive qualified up to 175°C

Benefits:

• Increased system efficiency due to reduced conduction and switching losses
• Higher power density in applications due to optimized thermal resistance
• Improved reliability due to robust design and avalanche capability
• Simplified gate drive requirements with logic level compatibility
• Reduced system cost due to higher efficiency and smaller component size

Additional Details:

The IPB26CN10NG is available in a PG-TO263-7 package. It features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 26A. The MOSFET is designed to operate at junction temperatures up to 175°C. The low gate charge and on-resistance characteristics make it an excellent choice for high-frequency switching applications where efficiency is paramount.