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IPB330P10NMATMA1

Part No IPB330P10NMATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs 236 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB330P
Other Names 448-IPB330P10NMATMA1TR,448-IPB330P10NMATMA1CT,SP005343858,448-IPB330P10NMATMA1DKR
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278277-IPB330P10NMATMA1
Ultra Librarian 3D Model Ultra Librarian IPB330P10NMATMA1 CAD Model

Description

The Infineon Technologies 1278277-IPB330P10NMATMA1 is a P-channel MOSFET that has a drain to source voltage of 100V and a maximum continuous drain current of 6.9A (Ta) and 62A (Tc).

  • Rds On (Max): 33mOhm @ 53A and 10V
  • Vgs(th): 4V @ 5.55mA
  • Mounting: Tape & Reel
  • Supplier Device Package: PG-TO263-3
  • Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.7973 $52.7703
26+ $3.9363 $102.3438
40+ $3.8133 $152.5320
55+ $3.6903 $202.9665
71+ $3.5673 $253.2783
94+ $3.1982 $300.6308
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,450 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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