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Same model may have multiple batches, images only for reference.
IPB60R190P6ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB60R190P6ATMA1

Part No IPB60R190P6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO263-3
Datasheet
IPB60R190P6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 630μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1750pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1006595-IPB60R190P6ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB60R190P6ATMA1 CAD Model

Description

The IPB60R190P6ATMA1 from Infineon Technologies is an N-Channel polarity MOSFET type discrete semiconductor product.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 20.2A (Tc)
  • Maximum Power Dissipation: 151W (Tc)
  • Mounting Type: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TO263
  • Maximum Rds On @ Id, Vgs: 190 mOhm @ 7.6A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7313 $51.9390
75+ $1.4206 $106.5450
110+ $1.3762 $151.3820
155+ $1.3318 $206.4290
195+ $1.2874 $251.0430
260+ $1.1542 $300.0920
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Availability: 1,000 pieces
MOQ: 30 pcs
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