The Infineon Technologies IPB60R380C6 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a maximum continuous drain current of 10.6A at 25°C.

• Maximum Rds On: 380 mOhm @ 3.8A and 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 32nC @ 10V
• Maximum Input Capacitance: 700pF @ 100V
• Application: Discrete semiconductor products
• Power Dissipation: 83W (Tc)
• Package: PG-TO263-2
• Also known as: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Suitable for: Power supplies, motor control, and lighting