The Infineon Technologies IPB60R950C6 MOSFET is an N-channel polarity device designed for use in discrete semiconductor products.

• FET Type: N-Channel
• Power Dissipation (Max) @ Tc: 37 W
• Drive Voltage (Vgs) (Max Rds On, Min Rds On): 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Voltage - Drain to Source Breakdown (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
• Vgs(th) (Max) @ Id: 3.5V @ 130μA
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) @ Vds: 280 pF @ 100 V
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Package / Case: PG-TO263-2
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB