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IPB65R150CFDATMA1

Name: IPB65R150CFDATMA1
Brand: Infineon Technologies
SKU: 460963
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IPB65R150CFDATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 22.4A TO-263
Datasheet	IPB65R150CFDATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	650V
Continuous Drain Current at 25°C	22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4.5V @ 900μA
Max Gate Charge	86nC @ 10V
Max Input Capacitance	2340pF @ 100V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	195.3W (Tc)
Maximum Rds On at Id,Vgs	150 mOhm @ 9.3A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO263
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1045809-IPB65R150CFDATMA1
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPB65R150CFDATMA1 CAD Model

Description

The Infineon Technologies IPB65R150CFDATMA1 is a N-Channel MOSFET that is designed to handle high power dissipation of up to 195.3W (Tc).

Power Dissipation: 195.3W (Tc)
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current: 22.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 900μA
Maximum Gate Charge: 86nC @ 10V
Maximum Input Capacitance: 2340pF @ 100V
Package: PG-TO263
Mounting: SMD (SMT)
Supply and Demand Status: Balanced
Status: Active

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$4.2109	$50.5308
29+	$3.4551	$100.1979
45+	$3.3472	$150.6240
62+	$3.2392	$200.8304
80+	$3.1312	$250.4960
107+	$2.8073	$300.3811

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 15,000 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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