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IPB65R190CFDAATMA1

Part No IPB65R190CFDAATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 650 V 17.5A (Tc) 151W (Tc) Surface Mount PG-TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series CoolMOS™
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
Power Dissipation (Max) 151W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB65R190
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1478954-IPB65R190CFDAATMA1
Ultra Librarian 3D Model Ultra Librarian IPB65R190CFDAATMA1 CAD Model

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Shipped from HK warehouse
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