The Vishay SIS488DN is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 40A at 25°C.

• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current: 40A @ 25°C
• Maximum Rds On: 5.5 mOhm @ 20A and 10V
• Gate-Source Threshold Voltage: 2.2V @ 250μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 1330pF @ 20V
• Package: PowerPAK 1212-8
• Operating Temperature Range: -55°C to 150°C (TJ)
• Family: SIS488DN
• Applications: Discrete Semiconductor Products
• Power Dissipation: 3.7W (Ta), 52W (Tc)
• Drive Voltage: 4.5V, 10V (max Rds On, min Rds On)
• Halogen-Free: Yes
• ECCN: EAR99
• Estimated EOL Date: 2029