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IPB79CN10N G

Part No IPB79CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 13A TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 12μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 716pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 79 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045819-IPB79CN10N G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB79CN10N G CAD Model

Description

The Infineon Technologies IPB79CN10N G is a MOSFET transistor that is ideal for use in various electronic applications.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 13A @ 25°C
  • Maximum Rds On (Id, Vgs): 79 mOhm @ 13A, 10V
  • Case/Package: PG-TO263-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Input Capacitance: 716pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 11nC @ 10V
  • Gate-Source Threshold Voltage: 4V @ 12μA
  • Power Dissipation: 31W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7546 $60.3680
190+ $0.6192 $117.6480
290+ $0.5998 $173.9420
400+ $0.5805 $232.2000
515+ $0.5611 $288.9665
690+ $0.5031 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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