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IPB80N06S2L-06

Part No IPB80N06S2L-06
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186077-IPB80N06S2L-06
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S2L-06 CAD Model

Description

The Infineon Technologies IPB80N06S2L-06 is a medium popularity MOSFET transistor.

  • Application: power management and alternative energy
  • Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id, Vgs: 11.8 mOhm @ 69A, 10V
  • Package: PG-TO251-3 (TO-251-3 stub leads, IPak)
  • Technology: N-Channel MOSFET
  • Gate-Source Threshold Voltage: 2.4V @ 83μA
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1783 $65.3490
65+ $1.7879 $116.2135
105+ $1.7313 $181.7865
140+ $1.6759 $234.6260
180+ $1.6205 $291.6900
240+ $1.4530 $348.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,020 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipping Information

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