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Same model may have multiple batches, images only for reference.
IPB80N06S3-07 Real Image
Same model may have multiple batches, images only for reference.

IPB80N06S3-07

Part No IPB80N06S3-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
IPB80N06S3-07 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 80μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7768pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045829-IPB80N06S3-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S3-07 CAD Model

Description

The Infineon Technologies 1045829-IPB80N06S3-07 MOSFET is a high-performance electronic component designed for use in discrete semiconductor products.

  • Polarity: N-Channel MOSFET
  • Maximum Power Dissipation: 135W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Application: Multiphase Controllers
  • Gate-Source Threshold Voltage: 4V @ 80μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 7768pF @ 25V
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)

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