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Same model may have multiple batches, images only for reference.
IXFX66N50Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFX66N50Q2

Part No IXFX66N50Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 66A PLUS247
Datasheet
IXFX66N50Q2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 8mA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 9125pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 735W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 1049544-IXFX66N50Q2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX66N50Q2 CAD Model

Description

The IXYS IXFX66N50Q2 is an obsolete (EOL) electronic component that is available in PLUS247-3 reference case.

  • Mounting Type: Through Hole
  • Polarity: N-Channel
  • Maximum Power Dissipation: 735W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 66A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 8mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds on @ Id,Vgs: 80 mOhm @ 500mA, 10V
  • Supply and Demand Status: Limited
  • Win Source Part Number: 1049544

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