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Same model may have multiple batches, images only for reference.
IPB80N08S2L-07 Real Image
Same model may have multiple batches, images only for reference.

IPB80N08S2L-07

Part No IPB80N08S2L-07
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 75V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Gate Charge (Qg) @ Vgs 233nC @ 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max 300W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Device Package PG-TO263-3-2
Win Source Part Number 017323-IPB80N08S2L-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N08S2L-07 CAD Model

Description

The Infineon Technologies IPB80N08S2L-07 is a power MOSFET transistor manufactured by Infineon Technologies.

  • Applications: electronic applications where high power handling capability is required
  • Drain-source voltage rating: 75V
  • Continuous Current: 80A
  • Package: TO-263-3, D2Pak
  • Applications: power supplies, motor control circuits, and other high current applications

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Quantity Unit Price Ext. Price
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19+ $5.2881 $100.4739
30+ $5.1228 $153.6840
41+ $4.9576 $203.2616
53+ $4.7923 $253.9919
70+ $4.2966 $300.7620
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