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IPB80P04P407ATMA2

Part No IPB80P04P407ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET_(20V 40V) PG-TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6085 pF @ 25 V
FET Feature -
Power Dissipation (Max) 88W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80P
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378624-IPB80P04P407ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB80P04P407ATMA2 CAD Model

Description

The IPB80P04P407ATMA2 is a P-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 80A @ 25°C
  • On-Resistance (Rds On): 7.4mOhm @ 80A, 10V
  • Gate-Source Voltage (Vgs): ±20V
  • Input Capacitance (Ciss): 6085pF @ 25V
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Power Dissipation: 88W
  • Operating Temperature: -55°C to 175°C (TJ)
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.5064 $60.1536
57+ $2.0566 $117.2262
87+ $1.9923 $173.3301
120+ $1.9281 $231.3720
155+ $1.8637 $288.8735
208+ $1.6710 $347.5680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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