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Same model may have multiple batches, images only for reference.
IPD082N10N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD082N10N3GATMA1

Part No IPD082N10N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO252-3
Datasheet
IPD082N10N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 75μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3980pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 73A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 117856-IPD082N10N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD082N10N3GATMA1 CAD Model

Description

The Infineon Technologies IPD082N10N3GATMA1 is an N-channel MOSFET transistor.

  • Type: N-channel MOSFET transistor
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 80A @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 75μA
  • Maximum Gate Charge: 55nC @ 10V
  • Rds On: 8.2 mOhm @ 73A, 10V
  • Technology: MOSFET
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation: 125W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: active
  • Category: Discrete Semiconductor Products
  • Supply and demand status: balanced

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