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IPD12CN10NGATMA1

Part No IPD12CN10NGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 67A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 4320pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 12.4 mOhm @ 67A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001846-IPD12CN10NGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD12CN10NGATMA1 CAD Model

Description

The Infineon Technologies IPD12CN10NGATMA1 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 67A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 83μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Rds On @ Id,Vgs: 12.4 mOhm @ 67A, 10V
  • Technology: MOSFET
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 125W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case / Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Active
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5018 $52.5630
85+ $1.2323 $104.7455
130+ $1.1938 $155.1940
175+ $1.1553 $202.1775
225+ $1.1167 $251.2575
300+ $1.0012 $300.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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