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Same model may have multiple batches, images only for reference.
IPD160N04LG Real Image
Same model may have multiple batches, images only for reference.

IPD160N04LG

Part No IPD160N04LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS® 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 20 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 300 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 738749-IPD160N04LG
Ultra Librarian 3D Model Ultra Librarian IPD160N04LG CAD Model

Description

The 738749-IPD160N04LG is a single N-channel MOSFET transistor from Infineon Technologies.

  • Category: discrete semiconductor products, specifically FETs and MOSFETs
  • Series: OptiMOS 3
  • Drain-to-Source Voltage: 40 V
  • Continuous Drain Current: 30A
  • On-Resistance: 16mOhm @ 30A and 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount
  • Gate Charge: 15 nC @ 10V
  • Status: active

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