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IPD230N06NGBTMA1

Part No IPD230N06NGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1003204-IPD230N06NGBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD230N06NGBTMA1 CAD Model

Description

The Infineon Technologies 1003204-IPD230N06NGBTMA1 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Polarity: N-Channel MOSFET
  • Maximum Power Dissipation: 100W (Tc)
  • Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 30V
  • Maximum Rds On @ Id,Vgs: 23 mOhm @ 30A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: PG-TO252-3
  • Product Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4934 $58.4406
22+ $5.3280 $117.2160
34+ $5.1617 $175.4978
47+ $4.9954 $234.7838
60+ $4.8291 $289.7460
81+ $4.3289 $350.6409
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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