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IPD30N06S2L-23

Part No IPD30N06S2L-23
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Continuous Drain Current 30(A)
Gate-Source Voltage (Max) ±20(V)
Power Dissipation 100(W)
Mounting Surface Mount
Drain-Source On-Res 0.023(ohm)
Operating Temp Range -55C to 175C
Package Type TO-252
Pin Count 2 +Tab
Polarity N
Type Power MOSFET
Number of Elements 1
Operating Temperature Classification Military
Channel Mode Enhancement
Drain-Source On-Volt 55(V)
Rad Hardened No
Win Source Part Number 083939-IPD30N06S2L-23
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IPD30N06S2L-23
Introduction Date July 18, 2006
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPD30N06S2L-23 CAD Model

Description

The Infineon Technologies IPD30N06S2L-23 is a Power MOSFET electronic component that is used in various applications such as power supplies, motor control, and DC-DC converters.

  • Supply and Demand: In balance
  • Win Source Part Number: 083939-IPD30N06S2L-23
  • Category: Discrete Semiconductor Product
  • Performance: High performance and reliability
  • Maximum Power Dissipation: 100W
  • Continuous Drain Current: 30A

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8627 $51.7620
145+ $0.7079 $102.6455
220+ $0.6858 $150.8760
305+ $0.6637 $202.4285
390+ $0.6415 $250.1850
525+ $0.5752 $301.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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