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Same model may have multiple batches, images only for reference.
IPD33CN10NGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD33CN10NGATMA1

Part No IPD33CN10NGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 27A TO252-3
Datasheet
IPD33CN10NGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 29μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1570pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 27A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1005142-IPD33CN10NGATMA1
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IPD33CN10NGATMA1 CAD Model

Description

The Infineon Technologies 1005142-IPD33CN10NGATMA1 is a MOSFET transistor designed for use in discrete semiconductor products.

  • Polarity: N-channel MOSFET
  • Maximum Power Dissipation: 58W (Tc)
  • Breakdown Voltage: 100V
  • Continuous Drain Current: 27A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 29μA
  • Maximum Gate Charge: 24nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 50V
  • Maximum Rds On @ Id,Vgs: 33 mOhm @ 27A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: PG-TO252-3
  • Product Status: Active
  • Popularity: Medium
  • Application: Power Management

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Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
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