The IPD50R950CE is a CoolMOS™ power MOSFET from Infineon Technologies. It is designed for high-voltage, high-efficiency power conversion applications. This MOSFET is known for its low on-state resistance (Rds(on)) and fast switching performance, making it ideal for demanding power applications.

Applications:

• Power Factor Correction (PFC) circuits
• Flyback converters
• Forward converters
• LED lighting
• Consumer power adapters

Features:

• Superjunction technology for low on-state resistance
• High blocking capability
• Low gate charge (Qg)
• Integrated gate resistor (Rg)
• ESD protection
• Pb-free lead finishing; RoHS compliant

Benefits:

• Increased system efficiency due to low Rds(on)
• Reduced switching losses
• Simplified gate drive design
• Improved system reliability due to integrated protection features
• Environmentally friendly due to Pb-free and RoHS compliance

Additional Details:

The IPD50R950CE features a Drain-Source voltage (Vds) of 500V and an on-state resistance (Rds(on)) of 0.95 Ohms. It is available in a PG-TO252-3 package designed for surface mounting on PCBs. The integrated gate resistor helps to reduce ringing and EMI (Electromagnetic Interference). The CoolMOS™ technology provides superior performance compared to conventional MOSFETs in high-voltage applications.

This MOSFET is particularly well-suited for applications where efficiency and power density are critical design considerations. Its robust design and performance characteristics make it a reliable choice for a variety of power management and conversion systems.