The IPD60R380E6 is a CoolMOS™ Power MOSFET from Infineon Technologies. This MOSFET is designed for high-efficiency power conversion in a variety of applications. It leverages Infineon's advanced superjunction technology to provide low on-resistance (RDS(on)) and reduced switching losses, enhancing overall system performance and energy efficiency.

Applications

• Switched-mode power supplies (SMPS): Commonly used in power supplies for servers, telecom equipment, and industrial applications.
• Power factor correction (PFC): Employed in PFC stages to improve the power factor of electronic devices.
• DC-DC converters: Suitable for DC-DC conversion in various electronic systems, including those in automotive and renewable energy sectors.
• Lighting: Used in electronic ballasts and LED lighting applications.

Features

• CoolMOS™ E6 Superjunction Technology: Provides very low on-resistance and gate charge.
• Low RDS(on): Reduces conduction losses, improving efficiency. Typical RDS(on) is 0.38 Ohms.
• High commutation ruggedness: Ensures reliable operation under demanding conditions.
• Low gate charge (Qg): Minimizes switching losses.
• Integrated gate resistor: Simplifies design and reduces external component count.
• Pb-free plating; RoHS compliant: Environmentally friendly.

Benefits

• Increased system efficiency: Reduces power consumption and heat generation.
• High power density: Enables smaller and more compact designs.
• Improved reliability: Robust design ensures stable operation.
• Reduced system cost: Fewer components required due to integrated features.
• Simplified thermal management: Lower RDS(on) reduces heat dissipation.

Additional Details

The IPD60R380E6 operates with a drain-source voltage (VDS) of up to 600V and can handle a continuous drain current (ID) of up to 9.9A (at 25°C). It is typically supplied in a PG-TO252 (DPAK) package, which allows for efficient heat dissipation. The device is designed to offer superior performance in hard-switching topologies, contributing to lower EMI and enhanced system reliability. Its optimized gate charge characteristics ensure fast switching speeds and reduced switching losses across a wide range of operating conditions. The device’s robust body diode further enhances its suitability for applications requiring hard commutation.