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Same model may have multiple batches, images only for reference.
IPD70R1K4P7SAUMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD70R1K4P7SAUMA1

Part No IPD70R1K4P7SAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 8.2A DPAK
Datasheet
IPD70R1K4P7SAUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 40μA
Max Gate Charge 4.7nC @ 10V
Max Input Capacitance 158pF @ 400V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 23W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 700mA, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1006934-IPD70R1K4P7SAUMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD70R1K4P7SAUMA1 CAD Model

Description

The Infineon Technologies IPD70R1K4P7SAUMA1 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current @ 25°C: 4A
  • Gate-Source Threshold Voltage: 3.5V @ 40μA
  • Maximum Gate Charge @ 10V: 4.7nC
  • Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 700mA, 10V
  • Mounting Type: SMD (SMT)
  • Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology: MOSFET
  • Power Dissipation: 23W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
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Availability: 40,750 pieces
MOQ: 110 pcs
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