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IPD85P04P407ATMA2

Part No IPD85P04P407ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS®-P2
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Rds On (Max) @ Id, Vgs 7.3mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6085 pF @ 25 V
Power Dissipation (Max) 88W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD85P04
Other Names 448-IPD85P04P407ATMA2TR,448-IPD85P04P407ATMA2DKR,SP002325774,448-IPD85P04P407ATMA2CT
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278383-IPD85P04P407ATMA2
Ultra Librarian 3D Model Ultra Librarian IPD85P04P407ATMA2 CAD Model

Description

The IPD85P04P407ATMA2 is a P-channel MOSFET transistor that is part of the OptiMOS®-P2 series from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS®-P2
  • Channel Type: P-channel
  • Application: Automotive
  • Compliance: AEC-Q101
  • Drain-to-Source Voltage: 40 V
  • Continuous Drain Current: 85 A @ 25°C
  • Maximum On-Resistance: 7.3 mOhm @ 85 A and 10 V gate-source voltage
  • Gate Charge: 89 nC @ 10 V gate-source voltage
  • Input Capacitance: 6085 pF @ 25 V drain-source voltage
  • Maximum Threshold Voltage: 4 V @ 150µA drain current
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Packaging: Tape and reel
  • Operating Temperature Range: -55°C to 175°C

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