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IPDH4N03LAG

Part No IPDH4N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 90A TO252-3-11
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 26nC @ 5V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069006-IPDH4N03LAG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPDH4N03LAG CAD Model

Description

The Infineon Technologies IPDH4N03LAG is an N-channel MOSFET transistor with a drain-source breakdown voltage of 25V and a maximum continuous drain current of 90A @ 25°C.

  • Maximum Rds On: 4.2 mOhm @ 60A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 26nC @ 5V
  • Maximum Input Capacitance: 3200pF @ 15V
  • Discrete Semiconductor Products: Yes
  • Power Dissipation: 94W (Tc)
  • Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Continuous Drain Current: 90A @ 25°C
  • Applications: power supplies, motor control, and lighting

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