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IPI029N06N

Part No IPI029N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPI029N06N Infineon Technologies MOSFETs N-Ch 60V 100A I2PAK-3 datasheet, inventory, & pricing.
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
REACH - SVHC Details
Technology Si
Mounting Style Through Hole
Package / Case TO-262-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.7 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 66 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Tube
Brand Infineon Technologies
Configuration Single
Fall Time 8 ns
Forward Transconductance - Min 80 S
Product Type MOSFETs
Rise Time 15 ns
Series OptiMOS 5
Factory Pack Quantity Factory Pack Quantity 500
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 17 ns
Part # Aliases IPI29N6NXK SP000962134 IPI029N06NAKSA1
Unit Weight 0.084199 oz
Ultra Librarian 3D Model Ultra Librarian IPI029N06N CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2015 $51.2240
39+ $2.6269 $102.4491
59+ $2.5448 $150.1432
82+ $2.4627 $201.9414
106+ $2.3806 $252.3436
141+ $2.1344 $300.9504
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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