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IPI139N08N3G

Part No IPI139N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186250-IPI139N08N3G
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI139N08N3G CAD Model

Description

The IPI139N08N3G is an OptiMOS™ N-Channel Power MOSFET from Infineon Technologies, designed for high-efficiency synchronous rectification in various power applications. This component is engineered to minimize conduction and switching losses, making it suitable for demanding environments requiring high power density and thermal performance.

Applications:

  • Synchronous rectification in SMPS (Switched-Mode Power Supplies)
  • DC-DC converters
  • Motor control applications
  • Battery management systems
  • Point of Load (POL) converters

Features:

  • OptiMOS™ technology: Delivers superior efficiency and low RDS(on).
  • Low on-state resistance (RDS(on)): Minimizes conduction losses.
  • Fast switching speed: Reduces switching losses.
  • Avalanche rated: Provides robustness against voltage transients.
  • Logic level drive: Simplifies gate drive circuitry.

Benefits:

  • High efficiency: Low RDS(on) and fast switching contribute to minimal power losses.
  • Compact design: Enables smaller and more efficient power supply solutions.
  • Simplified implementation: Logic-level compatibility eases integration with microcontrollers and gate drivers.
  • Robust performance: Avalanche rating enhances reliability in harsh operating conditions.
  • Improved thermal management: Optimized package design for effective heat dissipation.

Technical Specifications:

The IPI139N08N3G features a drain-source voltage (VDS) of 80V and a very low on-state resistance (RDS(on)) – typically around 13.9 mΩ at VGS = 10V. It is capable of handling a significant continuous drain current (ID), contingent upon the thermal conditions. The device is housed in a D2PAK (TO-263) package, facilitating effective heat dissipation. Its fast switching characteristics and avalanche rating ensure robust and efficient operation in high-frequency applications.

This MOSFET is well-suited for applications requiring high efficiency, compact size, and robust performance. Its advanced OptiMOS™ technology and optimized design make it an excellent choice for modern power electronics designs, particularly in synchronous rectification and DC-DC conversion stages.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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