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Same model may have multiple batches, images only for reference.
IPP050N06N G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP050N06N G

Part No IPP050N06N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO-220
Datasheet
IPP050N06N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 270μA
Max Gate Charge 167nC @ 10V
Max Input Capacitance 6100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069035-IPP050N06N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP050N06N G CAD Model

Description

The Infineon Technologies 069035-IPP050N06N G is a MOSFET technology product with a polarity of N-channel.

  • Dimension: TO-220-3
  • Mounting: through-hole
  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Continuous Drain Current: 100A (Tc)
  • Supply and Demand Status: limited

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