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Same model may have multiple batches, images only for reference.
IPP055N03LGXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP055N03LGXKSA1

Part No IPP055N03LGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-220-3
Datasheet
IPP055N03LGXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045958-IPP055N03LGXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP055N03LGXKSA1 CAD Model

Description

The Infineon Technologies IPP055N03LGXKSA1 is an N-Channel MOSFET designed for general-purpose use.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: Up to 50A @ 25°C
  • Maximum Rds On: 5.5 mOhm @ 30A and 10V
  • Package: PG-TO-220-3
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2106 $60.5300
120+ $0.9933 $119.1960
185+ $0.9623 $178.0255
250+ $0.9313 $232.8250
325+ $0.9002 $292.5650
430+ $0.8071 $347.0530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 474 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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