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IPP057N08N3GHKSA1

Part No IPP057N08N3GHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4750 pF @ 40 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP057M
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1479025-IPP057N08N3GHKSA1
Ultra Librarian 3D Model Ultra Librarian IPP057N08N3GHKSA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6875 $50.6250
75+ $1.3847 $103.8525
115+ $1.3414 $154.2610
155+ $1.2981 $201.2055
200+ $1.2549 $250.9800
270+ $1.1250 $303.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,509 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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